2026

[87] Body Defect-Mediated Nonlinear Generation-Recombination Dynamics Governing Conductance Response in Floating-Body Transistors

Been Kwak, Changhyeon Han, Joonhyeok Choi, Hwoibin You, Youngchan Cho, Sangwan Kim, Wonjun Shin* and Daewoong Kwon*
Microsystems & Nanoengineering, Accepted



[86]‍ ‍Ferroelectric Gas Sensors for Edge Intelligence

Hosu Park°, Seojun Hwang°, Jisu Jang° ,Youngchan Cho, Sangwan Kim, Daewoon Kwon*, Gyuweon Jung* and Wonjun Shin*
Sensors and Actuators B: Chemical, June 2026

[85]‍ ‍A ferroelectric-ionic-trapping transistor for ultra-low power and secure neuromorphic computing

Changhyeon Han°, Youngchan Cho°, Dongbin Kim°, Se-Hyun Hwang°, Minsuk Song, Been Kwak, David Radermacher, Min Wook Kang, Sangwan Kim, Jangsaeng*, Wonjun Shin* and Daewoong Kwon*
Nature Communication, May 2026



[84]‍ ‍Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing

Jeong-Han Kim°, Wonjun Shin*°, Ryun-Han Koo°, Jangsaeng Kim°, Eugene Park°, Piush Behera, Sojin Kim, Jinseok Hong, Feras Al-Dirini, Been Kwak, Jiwon You, Jiseong Im, Dooyong Koh, Yejin Hong, Qinyuan Xue, Hyun-Min Kim, Hyunho Seok, Youngchan Cho, Hwiin Ju, Wooje Jung, Kyunghwan Lee, Daewon Ha, Jong-Ho Lee, Seung-Yong Lee, Deok-Hwang Kwon, Frances M. Ross, Youngho Kang, Suraj S. Cheema* and Daewoong Kwon*
Nature Communication, May 2026

[83]‍ ‍A novel observation of negative differential resistance in a standard CMOS transistor and its applications on compact frequency doubler

Been Kwak°, Youngchan Cho°, Changhyeon Han°, Jongwoo Lee°, Sangwan Kim, Yunho Shin, Joonhyeok Choi, Dongbin Kim, Seung June Lee, Seunghoo Lee, Wonjun Shin,*, Daewoong Kwon*
Microsystems & Nanoengineering, May 2026



[82]‍ ‍Thermally Activated Excess Noise by Subgap Density-of-states in Si-Doped ZnSnO Thin-Film Transistor-Type Gas Sensor

Sung-Tae Lee°, Ji Ye Lee°, Youngchan Cho°, David Radermacher°, Yoonki Hong, Sang Yeol Lee* and Wonjun Shin*
Microsystems & Nanoengineering, May 2026



[81]‍ ‍CMOS-Compatible FTJ Hardware Unifying Stochastic Sampling and Deterministic Computing for On-Chip Image Generation

Ryun-Han Koo°, Jonghyun Ko°, Wonjun Shin°, Sangwoo Ryu, Jiseong Im, Sung-Ho Park, Joon Hwang, Minsuk Song, Youngchan Cho, Jangsaeng Kim, Gyuweon Jung, Daewoong Kwon and Jong-Ho Lee*
Nature Communications, May 2026

[80]‍ ‍Tunable Switching Mechanisms in HfZrO2-Based Tunnel Junctions for High-Performance Synaptic Arrays

Jiwon You°, Jeong-Han Kim°, Minsuk Song°, Been Kwak, Eun Chan Park, Manh-Cuong Nguyenc*, Wonjun Shin*, Jangsaeng Kim* and Daewoong Kwon*
Advanced Science, Vol. 13, No. 18 (March 2026)

[79]‍ Repurposing Si CMOS Nonidealities for Stochastic and Analog Image Processing

Been Kwak°, Ryun-Han Koo°, Changhyeon Han, Yunho Shin, Joonhyeok Choi, Dongbin Kim, Jongwoo Lee, Jiseong Im, Youngchan Cho, Jong-Ho Lee, Wonjun Shin* and Daewoong Kwon*
Science Advances, Vol. 12, No. 8 (February 2026)

[78]‍‍ A Monolithic Ferroelectric-Ionic Duality for Stochastic-Neuromorphic Core Integration

Changyeong Han°, Ryun-Han Koo°, Minsuk Song°, Youngchan Cho, Min Wook Kang, Jangsaeng Kim, Jong-Ho Lee, Wonjun Shin* and Daewoong Kwon*
Advanced Materials, Vol. 38, No. 12 (February 2026)


[77]‍ Transistor-Level Activation Functions via Two Gate Designs: Analog Sigmoid and Gaussian Control

Junhyung Cho°, Youngmin Han°, Won Woo Lee°, Youngwoo Yoo°, Kannan Udaya Mohanan, Chang-Hyun Kim, Junhwan Oh, Young-Joon Kim*, Wonjun Shin* and Hocheon Yoo*
Advanced Materials, Accepted

[76] ‍ ‍In materia shaping of randomness with a standard complementary metal-oxide-semiconductor transistor for task-adaptive entropy generation

Been Kwak°, Ryun-Han Koo°, Youngchan Cho°, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jonh-Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin and Daewoong Kwon*
Advanced Functional Materials, Vol. 36, No. 23 (March 2026)


[75]‍ ‍Asymmetric-Contact ZnON/DNTT Heterojunctions for Tunable MultiGaussian Anti-Ambipolar Responses

Won Woo Lee°, Dong Hyun Lee°, Eva Bestelink°, Sumyeong Kim°, Seong Cheol Jang, Wonjun Shin*, Radu A. Sporea*, Hyun-Suk Kim* and Hocheon Yoo*
ACS Applied Materials & Interfaces, Vol. 18, No. 3 (January 2026)

[74]‍ ‍Physical Reservoir Computing System via Hybrid Ferroelectric-Ionic Transistors

Ryun-Han Koo° , Changhyeon Han°, Jiyong Yim, Jiseong Im, Youngchan Cho, Jong-Ho Lee, Suraj S. Cheema, Jangsaeng Kim, Wonjun Shin andDaewoong Kwon*
Advanced Materials, Vol. 38, No. 2 (January 2026)

2025

[73]‍ ‍Gaussian-Sigmoid Reinforcement Transistors: Resolving Exploration-Exploitation Trade-off through Gate Voltage-Controlled Activation Functions

Jisoo Park°, Juhyung Seo°, Ryun-Han Koo°, Dinithi Jayasuriya°, Nethmi Jayasinghe, Wonjun Shin*, Amit R. Trivedi* andHocheon Yoo*
Advanced Functional Materials, Vol. 35, No. 49, (December 2025)

[72]‍ ‍Unraveling Ionic Switching Dynamics in High-k Dielectric Double-Gate Transistors via Low-Frequency Noise Spectroscopy

Soi Jeong°, Chang-Hyeon Han°, Been Kwak°, Ryun-Han Koo, Youngchan Cho, Jangsaeng Kim, Jong-Ho Lee, Daewoong Kwon* and Wonjun Shin*
Nano Convergence, Vol. 12, No. 48 (October 2025)

[71]‍ ‍Heterojunction-Driven Stochasticity: Bi-Heterojunction Noise-Enhanced Negative Transconductance Transistor in Image Generation

Youngmin Han°, Jaechan Song°, Jaechan Song°, Chang-Hyun Kim*, Eun Kwang Lee*, Wonjun Shin* and Hocheon Yoo*
Advanced Materials, Vol. 37, No. 41 (October 2025)

[70]‍ ‍Interface Percolation and Random Trap Generation in Ferroelectric Memory: A Two Step Degradation Mechanism Explored through Low-Frequency Noise Spectroscopy

Ryun-Han Koo°, Wonjun Shin°*, Jiaseong Im°, Seunghwan Kim, Sangwoo Ryu, Gyuweon Jung,  Jaengsaeng Kim,  Sung.-Ho Park, Kangwook Choi, Jonghyun Ko, Sung-Tae Lee, Daewoong Kwon* and Jong-Ho Lee*
Chaos, Solitons and Fractals, Vol. 199, Part 2 (October 2025)

[69]‍ ‍A Universal Re-Annealing Method for Enhancing Endurance in Hafnia Ferroelectric Memories: Insights from Stochastic Noise Analysis

Ryun-Han Koo°, Wonjun Shin°*, Jiseong Im, Sangwoo Ryu, Seunghwan Kim, Jangsaeng Kim, Kangwook Choi, Sung-Ho Park, Jonhyun Ko, Jongho Ji, Mingyun Oh, Gyuweon Jung, Sung-Tae Lee, Daewoong Kwon* and Jong-Ho Lee*
Chaos, Solitons and Fractals, Vol. 199, Part 2, October 2025

[68]‍ ‍Low-frequency noise in CMOS-integrated gas sensors: from a reliability constraint to a selective sensing feature

Chayoung Lee° , Yujeong Jeong°, Ryun-Han Koo°, Youngchan Cho°, Kangwook Choi, Gyuweon Jung, Jaehyeon Kim, Seongbin Hong, Jiseong Im, ung-Tae Lee, Jangsaeng Kim, David Radermacher, Wonjun Shin* andJong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 446 (September 2025)

[67]‍ ‍Over 10^11 -fold variability in particle-damaged graphene duodecimal PUFs using particle-damaged graphene

Dong Hyun Lee°, Youngmin Han°, Gunhoo Woo°, Hyelim Shin°, Jinill Cho°, Eun Kwang Lee*, Wonjun Shin*, Taesung Kim* and Hocheon Yoo*
Device, Vol. 3, No. 12 (September 2025)

[66]‍ ‍Physical Correlation between Stochasticity and Process-Induced Damage in Ferrolectric Memory Devices

Ryun-Han Koo°, Seunghwan Kim°, Jiseong Im, Sangwoo Ryu, Kangwook Choi, Sung-Ho Park, Jonghyun Ko, Jongho Ji, Mingyun Oh, Jangsaeng Kim, Gyuweon Jung, SungTae Lee, Daewoong Kwon*, Wonjun Shin* and Jong-Ho Lee*
Nano Convergence, Vol. 12, No. 43 (August 2025)

[65]‍ ‍Observation of 1/f 4 noise in organic bilayer ambipolar FETs and proposition of defect engineering method for ultimate noise control

Youngmin Han°, Jaechan Song°, Ryun-Han Koo°, Hocheon Yoo* and Wonjun Shin*
Advanced Electronic Materials, Vol. 11, No. 11 (July 2025)

[64]‍ ‍Ultrathin TiO2-interfaced Hafnia Ferroelectric Transistor for Large-Scale Neuromorphic Computing

Changhyeon Han°, Ryun-Han Koo°, Wonjun Shin°*, Jangsaeng Kim, Been Kwak, Jiseong Im, Sojin Kim, Seung-Yong Lee, Youngho Kang* and Daewoong Kwon*
Nano Energy, Vol.142, Part B (June 2025)


[63]‍ ‍Hafnia-based Ferroelectric Computer Vision System with Artificial Synaptic Array

Eun Chan Park°, Jangsaeng Kim°*, Jonghyun Ko°, Wonjun Shin°, Manh-Cuong Nguyen, Minsuk Song, Ki-Ryun Kwon and Daewoong Kwon*
Nano Energy, Vol. 131(June 2025)

[62] Low-Frequency Noise Spectroscopy for Navigating Geometrically Varying Strain Effects in HfO2 Ferroelectric FETs

Ryun-Han Koo°, Wonjun Shin°*, Sangwoo Kim°, Jangsaeng Kim°, Been Kwak, Jiseong Im, Hyunwoo Kim, Deok-Hwang Kwon, Suraj S. Cheema, Jong-Ho Lee and Daewoong Kwon*
Advanced Science, Vol. 12, No. 23 (June 2025)

[61]‍ Toward Understanding Temperature and Bias Instabilities of Anti-ambipolar Transistors via Low-Frequency Noise Spectroscopy

Jaechan Song°, Youngmin Han°, Ryun-Han Koo°, Junghye Seo, Hocheon Yoo*and Wonjun Shin*
Small, Vol. 21, No. 25 (June 2025)

[60]‍ ‍A new back-end-of-line ferroelectric field-effect transistor platform via laser processing

Sang Woo Kim°, Wonjun Shin°*, Ryun-Han Koo°, Jangsaeng Kim°, Jiseong Im, Dooyong Koh, Jong-Ho Lee, Suraj S. Cheema* and Daewoong Kwon*
Small, Vol. 21, No. 15 (April 2025)

[59]‍ ‍Defect Passivation of Hafnium Oxide Ferroelectric Tunnel Junction Using Forming Gas Annealing for Neuromorphic Applications

Manh-Cuong Nguyen°, Kyung Kyu Min°, Wonjun Shin°, Jiyong Yim, Rino Choi* andDaewoong Kwon*
Nano Convergence, Vol. 12 (March 2025)

[58]‍ ‍Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N-shape Switching Transistors

Juhyung Seo°, Seungme Kang°, Divake Kumar°, Wonjun Shin°, Jinill Cho, Taesung Kim, Yeongkwon Kim, Byung Chul Jang, Amit R. Trivedi* andHocheon Yoo*
Advanced Functional Materials, Vol. 35, No. 8 (February 2025)

[57] Stochastic behavior of random telegraph noise in ferroelectric devices: Impact of downscaling and mitigation strategies for neuromorphic applications

Ryun-Han Koo°, Wonjun Shin°, Sung-Tae Lee, Daewoong Kwon* and Jong-Ho Lee*
Chaos, Solitons, & Fractals, Vol. 191 (February 2025)

[56]‍ ‍Effects of Charge Imbalance on Field‐Induced Instability of HfO2‐Based Ferroelectric Tunnel Junctions

Wonjun Shin°, Chang-Hyeon Han°, Jangsaeng Kim°, Kyung Kyu Min* and Daewoong Kwon*
Advanced Electronic Materials, Vol. 11, No. 2 (February 2025)

[55] ‍ ‍Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review

Jisung Im°, Sanghyeon Pak°, Sung-Yun Woo*, Wonjun Shin* and Sung-Tae Lee*
Biomimetics, Vol. 10, No. 2 (February 2025)

[54]‍ ‍Does a large response suffice?: Thermally stable and low noise Si-doped IZO thin-film transistor-type gas sensors

Wonjun Shin°, Sunjin Lee°, Ryun-Han Koo°, Jangseng Kim°, Sang Yeol Lee* and Sung-Tae Lee*
Sensors and Actuators B: Chemical, Vol. 422 (January 2025)

2024

[53]‍ ‍Polarization Pruning: Reliability Enhancement of Hafnia-based Ferroelectric Devices for Memory and Neuromorphic Computing

Ryun-Han Koo, Wonjun Shin, Jangsaeng Kim, Jiyong Yim, Jonghyun Ko, Gyuweon Jung, Jiseong Im, Sung-Ho Park, Jae-Joon Kim, Suraj S. Cheema, Daewoong Kwon*andJong-Ho Lee*
Advanced Science, Vol. 11, No. 43 (November, 2024)

[52]‍ ‍All‐Ferroelectric Spiking Neural Networks via Morphotropic Phase Boundary Neurons

Jangsaeng Kim, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Jiseong Im, Chan-Hyeon Han, Jong-Ho Lee and Daewoong Kwon*
Advanced Science, Vol. 11, No. 44 (November 2024)

[51]‍ ‍Low-Frequency Noise of MoTe2 Transistor: Effects on Ambipolar Carrier Transport and CYTOP Doping

Wonjun Shin, Dong Hyeon Lee, Raksan Ko, Ryun-Han Koo, Hocheon Yoo* and Sung-Tae Lee*
Nanoscale Research Letter, Vol. 19 (November 2024)

[50]‍ ‍Low-Frequency Noise Analysis on Asymmetric Damage and Self-Recovery Behaviors of ZnSnO Thin-Film Transistors under Hot Carrier Stress

Wonjun Shin, Ji Ye Lee, Jaengsaeng Kim, Sang Yeol Lee* and Sung-Tae Lee*
Nanoscale Research Letters, Vol. 19 (November 2024)

[49]‍ ‍Low-frequency noise characteristics of recessed channel ferroelectric field-effect transistors

Been Kwak, Jangsaeng Kim, Kitae Lee, Wonjun Shin* and Daewoong Kwon*
IEEE Electron Device Letters, Vol. 45, No. 11,(November 2024)

[48]‍ ‍Strain-Stress Impact on Ferroelectric Devices: A Multi-layer Analysis and Optimization Strategy for Neural Networks

Ryun-Han Koo, Wonjun Shin, Gyuweon Jung, Jangsaeng Kim, Sung-Tae Lee, Jiseong Im, Sung-Ho Park, Jonghyun Ko, Daewoong Kwon* and Jong-Ho Lee*,
ACS Materials Letters, Vol. 6, No. 11 (October 2024)

[47]‍ ‍Analog Reservoir Computing via Double-Gate Morphotropic Phase Boundary Transistors

Jangseong Kim, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Chang-Hyeon Han, He Young Kang, Tae Gyu Yang, Youngin Goh, Kilho Lee, Daewon Ha, Suraj S. Cheema*, Jae-Kyeong Jeong* and Daewoong Kwon*
Nature Communications, Vol. 15 (October 2024)

[46]‍ ‍Robust 1/f noise unaffected by program/erase cycling-induced damage in ferroelectric Schottky barrier FETs

Wonjun Shin, Ryun-Han Koo, Sangwoo Kim, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 45, No. 9 (September 2024)

[45]‍ ‍Towards Ideal Low-Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management

Wonjun Shin*, Junsung Byeon, Ryun-Han Koo, Jungmoon Lim, Jung Hyeon Kang, A-Rang Jang, Jong-Ho Lee, Jae-Joon Kim, SeungNam Cha*, Sanghyeon Pak* and Sung-Tae Lee*
Advanced Science, Vol. 11, No. 28 (July 2024)

[44]‍ ‍Charge Transport Advancement in Anti-Ambipolar Transistors: Spatially Separating Layer Sandwiched between N-type Metal Oxides and P-type Small Molecules

Youngmin Han, Subin Lee, Minseo Kim, Wonjun Shin, Ho kyung Lee, Ryun-Han Koo, Sung-Tae Lee, Chang-Hyun Kim* and Hocheon Yoo*
Advanced Functional Materials, Vol. 34, No. 26 (June 2024)

[43]‍ ‍Examination of Ferroelectric Domain Dynamics in HZO under Endurance Cycling Stress

Ryun-Han Koo, Wonjun Shin, Sangwoo Ryu, Seunghwan Kim, Gyuweon Jung, Sung-Tae Lee, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 45, No. 6 (June 2024)

[42]‍ ‍Stochasticity in Ferroelectric Memory Devices with Different Bottom Electrode Crystallinity

Ryun-Han Koo, Wonjun Shin, Gyuweon Jung, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
Chaos Solitons & Fractals, Vol. 182 (June 2024)

[41]‍ ‍Significant Reduction of 1/f Noise in Organic Thin Film Transistors with Self-Assembled Monolayer: Considerations of Density-of-States

Wonjun Shin, Jisuk Bae, Joon Hyung Park, Jong-Ho Lee, Chang-Hyeon Kim* and Sung-Tae Lee*
IEEE Electron Device Letters, Vol. 45, No. 4 (April 2024)

[40]‍ ‍Proposition of optimal self-curing method in horizontal-floating gate FET-type gas sensors for reliability improvement

Wonjun Shin, Ryun-Han Koo, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Sung-Tae Lee and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 405 (April 2024)

[39] Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-based Neuromorphic System

Ryun-Han Koo, Wonjun Shin,Seunghwan Kim, Jiseong Im, Sung-Ho Park, Jong Hyun Ko, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
Advanced Science, Vol. 11, No. 5 (February 2024)

[38]Unveiled Influence of Subgap Density of States on Low-Frequency Noise in Si-doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?

Wonjun Shin, Ji Ye Lee, Ryun-Han Koo, Jangsaeng Kim, Jong-Ho Lee, Sang Yeol Lee* and Sung-Tae Lee*
Advanced Electronic Materials, Vol. 10, No. 2 (February 2024)

2023

[37]‍ ‍Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate Interlayer

Sang Woo Kim, Wonjun Shin, Munhyeon Kim, Ki Ryun Kwon, Jiyong Yim, Jeonghan Kim, Changhyeon Han, Soi Jeong, Eun Chan Park, Ji Won You, Hyunwoo Kim, Rino Choi* and Daewoong Kwon*
IEEE Electron Device Letters, Vol. 44, No. 12 (December 2023)

[36]‍ ‍Effects of Sensor platform scaling on Signal-to-Noise Ratio in the resistor- and Horizontal Floating-gate FET-type gas sensors

Wonjun Shin, Ryun-Han Koo, Seongbin Hong, Gyunweon Jung, Yujeong Jeong, Sung-Tae Lee and Jong-Ho Lee*
IEEE Transactions on Electron Devices, Vol. 70, No. 11 (November 2023)

[35]‍ ‍Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs using Low-Frequency Noise Measurement with Base Bias

Wonjun Shin, Ryun-Han Koo, Sangwoo Kim, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 10 (October 2023)

[34]‍ ‍Annealing Ambient and Film Thickness Dependent NO2 Response and 1/f Noise Characteristics of IGZO Resistor-type Gas Sensors

Wonjun Shin, Ryun-Han Koo, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Sung-Tae Lee and Jong-Ho Lee*
IEEE Transactions on Electron Devices, Vol. 70, No. 10 (October 2023)

[33]‍ ‍Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching

Ryun-Han Koo, Wonjun Shin, Sangwoo Ryu, Kyungmin Lee, Sung-Ho Park, Jiseong Im, Jong-Hyun Ko, Jeong Hyun Kim, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 10 (October 2023)

[32]‍ ‍Observation of interface trap reduction in fluoropolymer dielectric organic transistors by low-frequency noise spectroscopy

Wonjun Shin, Jihyun Shin, Jong-Ho Lee, Hocheon Yoo* and Sungtae Lee*
Applied Physics Letters, Vol. 122, No. 26 (June 2023)

[31] ‍ ‍1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network

Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Ryun-Han Koo, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
Advanced Intelligent Systems, Vol. 5, No. 6 (June 2023)

[30]‍ Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

Ryun-Han Koo, Wonjun Shin, Kyung Kyu Min, Dongseok Kwon, Jae-Joon Kim, Dsewoong Kwon*and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 6 (June 2023)

[29] Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors

Wonjun Shin, Sangwoo Kim, Ryun-Han Koo, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon*andJong_Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 6 (June, 2023)

[28] ‍ ‍Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network

Wonjun Shin, Jiyong Im, Ryun-Han Koo, Jaehyeon Kim, Ki-Ryun Kwon, Dongseok Kwon, Jae-Joon Kim, Jong-Ho Lee* and Daewoong Kwon*
Advanced Science, Vol. 10, No. 15 (May 2023)

[27]‍ ‍A novel pathway to construct gas concentration prediction model in real-world applications: Data augmentation; fast prediction; and interpolation and extrapolation

Jaehyeon Kim, Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Woo Young Choi, Jae-Joon Kim, Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 382 (May 2023)

[26]‍ ‍Low-frequency noise in gas sensors: A review

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Kangwook Choi, Hunhee Shin, Ryun-Han Koo, Jae-Joon Kim and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 15 (May 2023)

[25]‍ ‍Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure

Wonjun Shin, Eun Chan Park, Ryun-Han Koo, Dongseok Kwon, Daewoong Kwon*andJong-Ho Lee*
Applied Physics Letters, Vol. 122, No. 5 (April 2023)

[24]‍ ‍Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction

Wonjun Shin, Ryun-Han Koo, Kyung Kyu Min, Been Kwak, Dongeok Kwon, Daewoong Kwon* and Jong-Ho Lee*
Applied Physics Letters, Vol. 122, No. 5 (April 2023)

[23]‍ ‍In-Memory-Computed Low-Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide

Wonjun Shin, Jaehyeon Kim, Gyuweon Jung, Suyeon Ju, Sung-Ho Park, Yujeong Jeong, Seongbin Hong, Ryun--Han Koo, Yeongheon Yang, Jae-Joon Kim, Seungwu Han and Jong-Ho Lee*
Advanced Science, Vol. 10, No. 7 (March 2023)

[22] ‍ ‍Recovery of off- state stress induced damage in FET type gas sensor using self curing method

Wonjun Shin, Yujeong Jeong, Mingyu Kim, Jungsoo Lee, Ryun-Han Koo, Seongbin Hong, Gyuweon Jung, Jae-Joon Kim and Jong-Ho Lee*
Nano Scale Research Letter, Vol. 18, No. 1 (February, 2023)

[21]‍ ‍Unveiling Resistance Switching Mechanisms in Undoped HfOx Ferroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy

Wonjun Shin, Ryun-Han-H Koo, Kyung Kyu Min, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 2 (February 2023)

[20]‍ ‍Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

 Ryun-Han Koo, Wonjun Shin, Kyung Kyu Min, Dongseok Kwon, Dae Hwan Kim, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee* 
IEEE Electron Device Letters, Vol. 44, No. 2 (January 2023)

2022

[19] ‍ ‍Synergistic Improvement of Sensing Performance in Ferroelectric-Based Transistor-Type Gas Sensors Using Remnant Polarization

Wonjun Shin, Jiyong Yim, Jong-Ho Bae, Jung-Kyu Lee, Seongbin Hong, Jaehyeon Kim, Yujeong Jeong, Dongseok Kwon, Ryun-Han Koo, Gyuweon Jung, Changhyeon Han, Jeonghan Kim, Byung-Gook Park, Daewoong Kwon* and Jong-Ho Lee*
Materials Horizons, Vol. 9, No. 6 (September 2022)

[18]‍ ‍Fully Integrated FET-type Gas Sensor with optimized Signal-to-Noise Ratio for H2S gas detection

Wonjun Shin, Yujeong Jeong, Seongbin Hong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 367 (September 2022)

[17]‍ ‍Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

Wonjun Shin, Ryun-Han Koo, Seongbin Hong, Dongseok Kwon, Joon Hwang, Byung-Gook Park and Jong-Ho Lee* 
IEEE Electron Devices Letters, Vol. 43, No. 7 (July 2022)

[16]Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy

Wonjun Shin, Jong-Ho Bae, Jaehyeon Kim, Ryun-Han Koo, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
Applied Physics Letters, Vol. 121, No. 6 (July 2022)

[15]‍ ‍Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: from Conduction Mechanism and Scaling Perspectives

Wonjun Shin, Jong-Ho Bae, Dongseok Kwon, Ryun-Han Koo, Byung-Gook Park, Daewoong Kwon* and Jong-Ho Lee* 
IEEE Electron. Devices Letters, Vol. 43, No. 6 (June 2022)

[14] ‍ ‍Effects of Postdeposition Annealing Ambience on NO2 Gas Sensing Performance in Si-based FET-type Gas Sensor

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Byung-Gook Park and Jong-Ho Lee*
IEEE Transactions on Electron Devices, Vol. 69, No. 5 (May 2022)

[13] ‍ ‍Optimization of Channel Structure and Bias Condition for Signal-to-Noise Ratio Improvement in Si-based FET-type Gas sensor with Horizontal Floating-Gate

Wonjun Shin, Gyuweon Jung, Seongbin Hong, Yujeong Jeong, Jinwoo Park, Donghee Kim, Byung-Gook Park, Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 357 (April 2022)

[12]‍ ‍Effects of Channel Length Scaling on the Signal-to-Noise Ratio in FET-type Gas Sensor with Horizontal Floating-Gate

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park and Jong-Ho Lee*
IEEE Electron Devices Letters, Vol. 43, No. 3 (March 2022)

[11]‍ ‍Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy

Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Jiyong Yim, Dongseok Kwon, Yeonwoo Kim, Junsu Yu, Joon Hwang, Byung-Gook Park, Daewoong Kwon* and Jong-Ho Lee*
Nanoscale, Vol. 14, No. 6 (February 2022)

[10]Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET

Wonjun Shin, Jong-Ho Bae, Sihyun Kim, Kitae Lee, Dongseok Kwon, Byung-Gook Park, Daewoong Kwon* and Jong-Ho Lee* 
IEEE Electron Device Letters, Vol. 43, No. 1 (January 2022)

2021

[9]‍ ‍Effects of IGZO film thickness on H2S gas sensing performance: response, excessive recovery, low-frequency noise, and signal-to-noise-ratio

Wonjun Shin, Daehee Kwon, Minjeong Rhy, Jowon Kwon, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 344 (October 2021)

[8]‍ Optimization of post-deposition annealing temperature for improved signal-to-noise-ratio in In2O3 gas sensor

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park and Jong-Ho Lee*
Semiconductor Science and Technology, Vol. 36, No. 7 (June 2021)

[7]‍ ‍Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes

Wonjun Shin, Dongseok Kwon, Jong-Ho Bae, Suhwan Lim, Byung-Gook Park and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 42, No. 6 (June 2021)

[6]‍ ‍Effect of Charge Storage Engineering on NO2 Gas Sensing Properties in WO3 FET-type Gas Sensor with Horizontal Floating-Gate

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Chayoung Lee, Byung-Gook Park and Jong-Ho Lee*
Nanoscale, Vol. 13, No. 19 (May, 2021)

[5]‍ ‍Comparison of the characteristics of semiconductor gas sensors with different transducers fabricated on the same substrate

Gyunwoen Jung, Wonjun Shin, Seongbin Hong, Yujeong Jeong, Jinwoo Park, Donghee Kim, Jong-Ho Bae, Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 335 (May 2021)

[4] ‍ ‍Improved Signal-to-Noise-Ratio of FET-type Gas Sensors Using Body Bias Control and Embedded Micro-Heater

Wonjun Shin, Seongbin Hong, Gyunwon Jung, Yujeon Jeon, Jinwoo Park, Donghee Kim, Dongkyu Jang, Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 329 (February 2021)

[3]‍ ‍Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

Dongseok Kwon, Wonjun Shin, Jong-Ho Bae, Suhwan Lim, Byung-Gook Park and Jong-Ho Lee*
IEEE, Vol. 42, No. 3 (January 2021)

2020

[2]‍ ‍Proposition of Deposition and Bias Conditions for Optimal Signal-to-Noise-Ratio in Resistor- and FET-type Gas Sensors

Wonjun Shin, Gyuweon Jung, Seongbin Hong,Yujeong Jeong, Jinwoo Park, Donghee Kim, Dongkyu Jang, Dongseok Kwon, Jong-Ho Bae, Byung-Gook Park and Jong-Ho Lee*
Nanoscale, Vol. 12, No. 38 (September 2020)

[1] Low frequency noise characteristics of resistor- and Si MOSFET-type gas sensors fabricated on the same wafer with In2O3 sensing layer

Wonjun Shin, Gyuweon Jung ,Seongbin Hong ,Yujeong Jeong, Jinwoo Park, Dongkyu Jang ,Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 318 (September 2020)