2026

[85] Thermally Activated Excess Noise by Subgap Density-of-states in Si-Doped ZnSnO Thin-Film Transistor-Type Gas Sensor

Sung-Tae Lee, Ji Ye Lee, Youngchan Cho, David Radermacher, Yoonki Hong, Sang Yeol Lee* and Wonjun Shin*
Microsystems & Nanoengineering, Accepted

[84] A ferroelectric-ionic-trapping transistor for ultra-low power and secure neuromorphic computing

Changhyeon Han, Youngchan Cho, Dongbin Kim, Se-Hyun Hwang, Minsuk Song, Been Kwak, David Radermacher, Min Wook Kang, Sangwan Kim, Jangsaeng*, Wonjun Shin* and Daewoong Kwon*
Nature Communication, Accepted

[83] A novel observation of negative differential resistance in a standard CMOS transistor and its applications on compact frequency doubler

Been Kwak, Youngchan Cho, Changhyeon Han, Jongwoo Lee, Sangwan Kim, Yunho Shin, Joonhyeok Choi, Dongbin Kim, Seung June Lee, Seunghoo Lee, Wonjun Shin,*, Daewoong Kwon*
Microsystems & Nanoengineering, Accepted


[82] CMOS-Compatible FTJ Hardware Unifying Stochastic Sampling and Deterministic Computing for On-Chip Image Generation

Ryun-Han Koo, Jonghyun Ko, Wonjun Shin, Sangwoo Ryu, Jiseong Im, Sung-Ho Park, Joon Hwang, Minsuk Song, Youngchan Cho, Jangsaeng Kim, Gyuweon Jung, Daewoong Kwon and Jong-Ho Lee*
Nature Communications, Accepted

[81] Hybrid ferroelectric-ionic memristive hardware for ultrahigh scalability in-memory computing

Jeong-Han Kim, Wonjun Shin* , Ryun-Han Koo, Jangsaeng Kim , Eugene Park , Piush Behera, Sojin Kim, Jinseok Hong, Feras Al-Dirini, Been Kwak, Jiwon You, Jiseong Im, Dooyong Koh, Yejin Hong, Qinyuan Xue, Hyunho Seok, Youngchan Cho, Hwiin Ju, Wooje Jung, Kyunghwan Lee, Daewon Ha, Jong-Ho Lee, Seung-Yong Lee, Deok-Hwang Kwon, Frances M. Ross, Youngho Kang, Suraj S. Cheema* and Daewoong Kwon*
Nature Communications, Accepted

[80]‍ ‍Tunable Switching Mechanisms in HfZrO2-Based Tunnel Junctions for High-Performance Synaptic Arrays

Jiwon You, Jeong-Han Kim, Minsuk Song, Been Kwak, Eun Chan Park, Manh-Cuong Nguyenc*, Wonjun Shin*, Jangsaeng Kim* and Daewoong Kwon*
Advanced Science, Vol. 13, No. 18 (March 2026)

[79]‍ Repurposing Si CMOS Nonidealities for Stochastic and Analog Image Processing

Been Kwak, Ryun-Han Koo, Changhyeon Han, Yunho Shin, Joonhyeok Choi, Dongbin Kim, Jongwoo Lee, Jiseong Im, Youngchan Cho, Jong-Ho Lee, Wonjun Shin* and Daewoong Kwon*
Science Advances, Vol. 12, No. 8 (February 2026)

[78]‍‍ ‍A Monolithic Ferroelectric-Ionic Duality for Stochastic-Neuromorphic Core Integration

Changyeong Han, Ryun-Han Koo, M. Song, Youngchan Cho, Min Wook Kang, Jangsaeng Kim, Jong-Ho Lee, Wonjun Shin* and Daewoong Kwon*
Advanced Materials, Vol. 38, No. 12 (February 2026)


[77]‍ Transistor-Level Activation Functions via Two Gate Designs: Analog Sigmoid and Gaussian Control

Junhyung Cho, Youngmin Han, Won Woo Lee, Youngwoo Yoo, Kannan Udaya Mohanan, Chang-Hyun Kim, Junhwan Oh, Young-Joon Kim*, Wonjun Shin* and Hocheon Yoo*
Advanced Materials, Accepted

[76] ‍ ‍In materia shaping of randomness with a standard complementary metal-oxide-semiconductor transistor for task-adaptive entropy generation

Been Kwak, Ryun-Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jonh-Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin and Daewoong Kwon*
Advanced Functional Materials, Vol. 36, No. 23 (March 2026)


[75]‍ ‍Asymmetric-Contact ZnON/DNTT Heterojunctions for Tunable MultiGaussian Anti-Ambipolar Responses

Won Woo Lee, Dong Hyun Lee, Eva Bestelink, Sumyeong Kim, Seong Cheol Jang, Wonjun Shin*, Radu A. Sporea*, Hyun-Suk Kim* and Hocheon Yoo*
ACS Applied Materials & Interfaces, Vol. 18, No. 3 (January 2026)

[74]‍ ‍Physical Reservoir Computing System via Hybrid Ferroelectric-Ionic Transistors

Ryun-Han Koo , Changhyeon Han , Jiyong Yim, Jiseong Im, Youngchan Cho, Jong-Ho Lee, Suraj S. Cheema, Jangsaeng Kim, Wonjun Shin andDaewoong Kwon*
Advanced Materials, Vol. 38, No. 2 (January 2026)

2025

[73]‍ ‍Gaussian-Sigmoid Reinforcement Transistors: Resolving Exploration-Exploitation Trade-off through Gate Voltage-Controlled Activation Functions

Jisoo Park, Juhyung Seo, Ryun-Han Koo, Dinithi Jayasuriya, Nethmi Jayasinghe, Wonjun Shin*, Amit R. Trivedi* andHocheon Yoo*
Advanced Functional Materials, Vol. 35, No. 49, (December 2025)

[72]‍ ‍Unraveling Ionic Switching Dynamics in High-k Dielectric Double-Gate Transistors via Low-Frequency Noise Spectroscopy

Soi Jeong, Chang-Hyeon Han, Been Kwak, Ryun-Han Koo, Youngchan Cho, Jangsaeng Kim, Jong-Ho Lee, Daewoong Kwon* and Wonjun Shin*
Nano Convergence, Vol. 12, No. 48 (October 2025)

[71]‍ ‍Heterojunction-Driven Stochasticity: Bi-Heterojunction Noise-Enhanced Negative Transconductance Transistor in Image Generation

Youngmin Han, Jaechan Song, Chang-Hyun Kim*, Eun Kwang Lee*, Wonjun Shin* and Hocheon Yoo*
Advanced Materials, Vol. 37, No. 41 (October 2025)

[70]‍ ‍Interface Percolation and Random Trap Generation in Ferroelectric Memory: A Two Step Degradation Mechanism Explored through Low-Frequency Noise Spectroscopy

Ryun-Han Koo, Wonjun Shin*, Jiaseong Im, Seunghwan Kim, Sangwoo Ryu, Gyuweon Jung,  Jaengsaeng Kim,  Sung.-Ho Park, Kangwook Choi, Jonghyun Ko, Sung-Tae Lee, Daewoong Kwon* and Jong-Ho Lee*
Chaos, Solitons and Fractals, Vol. 199, Part 2 (October 2025)

[69]‍ ‍A Universal Re-Annealing Method for Enhancing Endurance in Hafnia Ferroelectric Memories: Insights from Stochastic Noise Analysis

Ryun-Han Koo, Wonjun Shin*, Jiseong Im, Sangwoo Ryu, Seunghwan Kim, Jangsaeng Kim, Kangwook Choi, Sung-Ho Park, Jonhyun Ko, Jongho Ji, Mingyun Oh, Gyuweon Jung, Sung-Tae Lee, Daewoong Kwon* and Jong-Ho Lee*
Chaos, Solitons and Fractals, Vol. 199, Part 2, October 2025

[68]‍ ‍Low-frequency noise in CMOS-integrated gas sensors: from a reliability constraint to a selective sensing feature

Chayoung Lee , Yujeong Jeong, Ryun-Han Koo, Youngchan Cho, Kangwook Choi, Gyuweon Jung, Jaehyeon Kim, Seongbin Hong, Jiseong Im, ung-Tae Lee, Jangsaeng Kim, David Radermacher, Wonjun Shin* andJong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 446 (September 2025)

[67]‍ ‍Over 10^11 -fold variability in particle-damaged graphene duodecimal PUFs using particle-damaged graphene

Dong Hyun Lee, Youngmin Han, Gunhoo Woo, Hyelim Shin, Jinill Cho, Eun Kwang Lee*, Wonjun Shin*, Taesung Kim* and Hocheon Yoo*
Device, Vol. 3, No. 12 (September 2025)

[66]‍ ‍Physical Correlation between Stochasticity and Process-Induced Damage in Ferrolectric Memory Devices

Ryun-Han Koo, Seunghwan Kim, Jiseong Im, Sangwoo Ryu, Kangwook Choi, Sung-Ho Park, Jonghyun Ko, Jongho Ji, Mingyun Oh, Jangsaeng Kim, Gyuweon Jung, SungTae Lee, Daewoong Kwon*, Wonjun Shin* and Jong-Ho Lee*
Nano Convergence, Vol. 12, No. 43 (August 2025)

[65]‍ ‍Observation of 1/f 4 noise in organic bilayer ambipolar FETs and proposition of defect engineering method for ultimate noise control

Youngmin Han, Jaechan Song, Ryun-Han Koo, Hocheon Yoo* and Wonjun Shin*
Advanced Electronic Materials, Vol. 11, No. 11 (July 2025)

[64]‍ ‍Ultrathin TiO2-interfaced Hafnia Ferroelectric Transistor for Large-Scale Neuromorphic Computing

Changhyeon Han, Ryun-Han Koo, Wonjun Shin*, Jangsaeng Kim, Been Kwak, Jiseong Im, Sojin Kim, Seung-Yong Lee, Youngho Kang* and Daewoong Kwon*
Nano Energy, Vol.142, Part B (June 2025)


[63]‍ ‍Hafnia-based Ferroelectric Computer Vision System with Artificial Synaptic Array

Eun Chan Park, Jangsaeng Kim*, Jonghyun Ko, Wonjun Shin, Manh-Cuong Nguyen, Minsuk Song, Ki-Ryun Kwon and Daewoong Kwon*
Nano Energy, Vol. 131(June 2025)

[62] Low-Frequency Noise Spectroscopy for Navigating Geometrically Varying Strain Effects in HfO2 Ferroelectric FETs

Ryun-Han Koo, Wonjun Shin*, Sangwoo Kim, Jangsaeng Kim, Been Kwak, Jiseong Im, Hyunwoo Kim, Deok-Hwang Kwon, Suraj S. Cheema, Jong-Ho Lee and Daewoong Kwon*
Advanced Science, Vol. 12, No. 23 (June 2025)

[61]‍ Toward Understanding Temperature and Bias Instabilities of Anti-ambipolar Transistors via Low-Frequency Noise Spectroscopy

Jaechan Song, Youngmin Han, Ryun-Han Koo, Junghye Seo, Hocheon Yoo*and Wonjun Shin*
Small, Vol. 21, No. 25 (June 2025)

[60]‍ ‍A new back-end-of-line ferroelectric field-effect transistor platform via laser processing

Sang Woo Kim, Wonjun Shin*, Ryun-Han Koo, Jangsaeng Kim, Jiseong Im, Dooyong Koh, Jong-Ho Lee, Suraj S. Cheema* and Daewoong Kwon*
Small, Vol. 21, No. 15 (April 2025)

[59]‍ ‍Defect Passivation of Hafnium Oxide Ferroelectric Tunnel Junction Using Forming Gas Annealing for Neuromorphic Applications

Manh-Cuong Nguyen, Kyung Kyu Min, Wonjun Shin, Jiyong Yim, Rino Choi* andDaewoong Kwon*
Nano Convergence, Vol. 12 (March 2025)

[58]‍ ‍Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N-shape Switching Transistors

Juhyung Seo, Seungme Kang, Divake Kumar, Wonjun Shin, Jinill Cho, Taesung Kim, Yeongkwon Kim, Byung Chul Jang, Amit R. Trivedi* andHocheon Yoo*
Advanced Functional Materials, Vol. 35, No. 8 (February 2025)

[57] Stochastic behavior of random telegraph noise in ferroelectric devices: Impact of downscaling and mitigation strategies for neuromorphic applications

Ryun-Han Koo, Wonjun Shin, Sung-Tae Lee, Daewoong Kwon* and Jong-Ho Lee*
Chaos, Solitons, & Fractals, Vol. 191 (February 2025)

[56]‍ ‍Effects of Charge Imbalance on Field‐Induced Instability of HfO2‐Based Ferroelectric Tunnel Junctions

Wonjun Shin, Chang-Hyeon Han, Jangsaeng Kim, Kyung Kyu Min* and Daewoong Kwon*
Advanced Electronic Materials, Vol. 11, No. 2 (February 2025)

[55] ‍ ‍Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review

Jisung Im, Sanghyeon Pak, Sung-Yun Woo*, Wonjun Shin* and Sung-Tae Lee*
Biomimetics, Vol. 10, No. 2 (February 2025)

[54]‍ ‍Does a large response suffice?: Thermally stable and low noise Si-doped IZO thin-film transistor-type gas sensors

Wonjun Shin, Sunjin Lee, Ryun-Han Koo, Jangseng Kim, Sang Yeol Lee* and Sung-Tae Lee*
Sensors and Actuators B: Chemical, Vol. 422 (January 2025)

2024

[53]‍ ‍Polarization Pruning: Reliability Enhancement of Hafnia-based Ferroelectric Devices for Memory and Neuromorphic Computing

Ryun-Han Koo, Wonjun Shin, Jangsaeng Kim, Jiyong Yim, Jonghyun Ko, Gyuweon Jung, Jiseong Im, Sung-Ho Park, Jae-Joon Kim, Suraj S. Cheema, Daewoong Kwon*andJong-Ho Lee*
Advanced Science, Vol. 11, No. 43 (November, 2024)

[52]‍ ‍All‐Ferroelectric Spiking Neural Networks via Morphotropic Phase Boundary Neurons

Jangsaeng Kim, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Jiseong Im, Chan-Hyeon Han, Jong-Ho Lee and Daewoong Kwon*
Advanced Science, Vol. 11, No. 44 (November 2024)

[51]‍ ‍Low-Frequency Noise of MoTe2 Transistor: Effects on Ambipolar Carrier Transport and CYTOP Doping

Wonjun Shin, Dong Hyeon Lee, Raksan Ko, Ryun-Han Koo, Hocheon Yoo* and Sung-Tae Lee*
Nanoscale Research Letter, Vol. 19 (November 2024)

[50]‍ ‍Low-Frequency Noise Analysis on Asymmetric Damage and Self-Recovery Behaviors of ZnSnO Thin-Film Transistors under Hot Carrier Stress

Wonjun Shin, Ji Ye Lee, Jaengsaeng Kim, Sang Yeol Lee* and Sung-Tae Lee*
Nanoscale Research Letters, Vol. 19 (November 2024)

[49]‍ ‍Low-frequency noise characteristics of recessed channel ferroelectric field-effect transistors

Been Kwak, Jangsaeng Kim, Kitae Lee, Wonjun Shin* and Daewoong Kwon*
IEEE Electron Device Letters, Vol. 45, No. 11,(November 2024)

[48]‍ ‍Strain-Stress Impact on Ferroelectric Devices: A Multi-layer Analysis and Optimization Strategy for Neural Networks

Ryun-Han Koo, Wonjun Shin, Gyuweon Jung, Jangsaeng Kim, Sung-Tae Lee, Jiseong Im, Sung-Ho Park, Jonghyun Ko, Daewoong Kwon* and Jong-Ho Lee*,
ACS Materials Letters, Vol. 6, No. 11 (October 2024)

[47]‍ ‍Analog Reservoir Computing via Double-Gate Morphotropic Phase Boundary Transistors

Jangseong Kim, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Chang-Hyeon Han, He Young Kang, Tae Gyu Yang, Youngin Goh, Kilho Lee, Daewon Ha, Suraj S. Cheema*, Jae-Kyeong Jeong* and Daewoong Kwon*
Nature Communications, Vol. 15 (October 2024)

[46]‍ ‍Robust 1/f noise unaffected by program/erase cycling-induced damage in ferroelectric Schottky barrier FETs

Wonjun Shin, Ryun-Han Koo, Sangwoo Kim, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 45, No. 9 (September 2024)

[45]‍ ‍Towards Ideal Low-Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management

Wonjun Shin*, Junsung Byeon, Ryun-Han Koo, Jungmoon Lim, Jung Hyeon Kang, A-Rang Jang, Jong-Ho Lee, Jae-Joon Kim, SeungNam Cha*, Sanghyeon Pak* and Sung-Tae Lee*
Advanced Science, Vol. 11, No. 28 (July 2024)

[44]‍ ‍Charge Transport Advancement in Anti-Ambipolar Transistors: Spatially Separating Layer Sandwiched between N-type Metal Oxides and P-type Small Molecules

Youngmin Han, Subin Lee, Minseo Kim, Wonjun Shin, Ho kyung Lee, Ryun-Han Koo, Sung-Tae Lee, Chang-Hyun Kim* and Hocheon Yoo*
Advanced Functional Materials, Vol. 34, No. 26 (June 2024)

[43]‍ ‍Examination of Ferroelectric Domain Dynamics in HZO under Endurance Cycling Stress

Ryun-Han Koo, Wonjun Shin, Sangwoo Ryu, Seunghwan Kim, Gyuweon Jung, Sung-Tae Lee, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 45, No. 6 (June 2024)

[42]‍ ‍Stochasticity in Ferroelectric Memory Devices with Different Bottom Electrode Crystallinity

Ryun-Han Koo, Wonjun Shin, Gyuweon Jung, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
Chaos Solitons & Fractals, Vol. 182 (June 2024)

[41]‍ ‍Significant Reduction of 1/f Noise in Organic Thin Film Transistors with Self-Assembled Monolayer: Considerations of Density-of-States

Wonjun Shin, Jisuk Bae, Joon Hyung Park, Jong-Ho Lee, Chang-Hyeon Kim* and Sung-Tae Lee*
IEEE Electron Device Letters, Vol. 45, No. 4 (April 2024)

[40]‍ ‍Proposition of optimal self-curing method in horizontal-floating gate FET-type gas sensors for reliability improvement

Wonjun Shin, Ryun-Han Koo, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Sung-Tae Lee and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 405 (April 2024)

[39] Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-based Neuromorphic System

Ryun-Han Koo, Wonjun Shin,Seunghwan Kim, Jiseong Im, Sung-Ho Park, Jong Hyun Ko, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
Advanced Science, Vol. 11, No. 5 (February 2024)

[38]Unveiled Influence of Subgap Density of States on Low-Frequency Noise in Si-doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?

Wonjun Shin, Ji Ye Lee, Ryun-Han Koo, Jangsaeng Kim, Jong-Ho Lee, Sang Yeol Lee* and Sung-Tae Lee*
Advanced Electronic Materials, Vol. 10, No. 2 (February 2024)

2023

[37]‍ ‍Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate Interlayer

Sang Woo Kim, Wonjun Shin, Munhyeon Kim, Ki Ryun Kwon, Jiyong Yim, Jeonghan Kim, Changhyeon Han, Soi Jeong, Eun Chan Park, Ji Won You, Hyunwoo Kim, Rino Choi* and Daewoong Kwon*
IEEE Electron Device Letters, Vol. 44, No. 12 (December 2023)

[36]‍ ‍Effects of Sensor platform scaling on Signal-to-Noise Ratio in the resistor- and Horizontal Floating-gate FET-type gas sensors

Wonjun Shin, Ryun-Han Koo, Seongbin Hong, Gyunweon Jung, Yujeong Jeong, Sung-Tae Lee and Jong-Ho Lee*
IEEE Transactions on Electron Devices, Vol. 70, No. 11 (November 2023)

[35]‍ ‍Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs using Low-Frequency Noise Measurement with Base Bias

Wonjun Shin, Ryun-Han Koo, Sangwoo Kim, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 10 (October 2023)

[34]‍ ‍Annealing Ambient and Film Thickness Dependent NO2 Response and 1/f Noise Characteristics of IGZO Resistor-type Gas Sensors

Wonjun Shin, Ryun-Han Koo, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Sung-Tae Lee and Jong-Ho Lee*
IEEE Transactions on Electron Devices, Vol. 70, No. 10 (October 2023)

[33]‍ ‍Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching

Ryun-Han Koo, Wonjun Shin, Sangwoo Ryu, Kyungmin Lee, Sung-Ho Park, Jiseong Im, Jong-Hyun Ko, Jeong Hyun Kim, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 10 (October 2023)

[32]‍ ‍Observation of interface trap reduction in fluoropolymer dielectric organic transistors by low-frequency noise spectroscopy

Wonjun Shin, Jihyun Shin, Jong-Ho Lee, Hocheon Yoo* and Sungtae Lee*
Applied Physics Letters, Vol. 122, No. 26 (June 2023)

[31] ‍ ‍1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network

Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Ryun-Han Koo, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
Advanced Intelligent Systems, Vol. 5, No. 6 (June 2023)

[30]‍ Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

Ryun-Han Koo, Wonjun Shin, Kyung Kyu Min, Dongseok Kwon, Jae-Joon Kim, Dsewoong Kwon*and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 6 (June 2023)

[29] Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors

Wonjun Shin, Sangwoo Kim, Ryun-Han Koo, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon*andJong_Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 6 (June, 2023)

[28] ‍ ‍Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network

Wonjun Shin, Jiyong Im, Ryun-Han Koo, Jaehyeon Kim, Ki-Ryun Kwon, Dongseok Kwon, Jae-Joon Kim, Jong-Ho Lee* and Daewoong Kwon*
Advanced Science, Vol. 10, No. 15 (May 2023)

[27]‍ ‍A novel pathway to construct gas concentration prediction model in real-world applications: Data augmentation; fast prediction; and interpolation and extrapolation

Jaehyeon Kim, Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Woo Young Choi, Jae-Joon Kim, Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 382 (May 2023)

[26]‍ ‍Low-frequency noise in gas sensors: A review

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Kangwook Choi, Hunhee Shin, Ryun-Han Koo, Jae-Joon Kim and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 15 (May 2023)

[25]‍ ‍Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure

Wonjun Shin, Eun Chan Park, Ryun-Han Koo, Dongseok Kwon, Daewoong Kwon*andJong-Ho Lee*
Applied Physics Letters, Vol. 122, No. 5 (April 2023)

[24]‍ ‍Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction

Wonjun Shin, Ryun-Han Koo, Kyung Kyu Min, Been Kwak, Dongeok Kwon, Daewoong Kwon* and Jong-Ho Lee*
Applied Physics Letters, Vol. 122, No. 5 (April 2023)

[23]‍ ‍In-Memory-Computed Low-Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide

Wonjun Shin, Jaehyeon Kim, Gyuweon Jung, Suyeon Ju, Sung-Ho Park, Yujeong Jeong, Seongbin Hong, Ryun--Han Koo, Yeongheon Yang, Jae-Joon Kim, Seungwu Han and Jong-Ho Lee*
Advanced Science, Vol. 10, No. 7 (March 2023)

[22] ‍ ‍Recovery of off- state stress induced damage in FET type gas sensor using self curing method

Wonjun Shin, Yujeong Jeong, Mingyu Kim, Jungsoo Lee, Ryun-Han Koo, Seongbin Hong, Gyuweon Jung, Jae-Joon Kim and Jong-Ho Lee*
Nano Scale Research Letter, Vol. 18, No. 1 (February, 2023)

[21]‍ ‍Unveiling Resistance Switching Mechanisms in Undoped HfOx Ferroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy

Wonjun Shin, Ryun-Han-H Koo, Kyung Kyu Min, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 44, No. 2 (February 2023)

[20]‍ ‍Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

 Ryun-Han Koo, Wonjun Shin, Kyung Kyu Min, Dongseok Kwon, Dae Hwan Kim, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee* 
IEEE Electron Device Letters, Vol. 44, No. 2 (January 2023)

2022

[19] ‍ ‍Synergistic Improvement of Sensing Performance in Ferroelectric-Based Transistor-Type Gas Sensors Using Remnant Polarization

Wonjun Shin, Jiyong Yim, Jong-Ho Bae, Jung-Kyu Lee, Seongbin Hong, Jaehyeon Kim, Yujeong Jeong, Dongseok Kwon, Ryun-Han Koo, Gyuweon Jung, Changhyeon Han, Jeonghan Kim, Byung-Gook Park, Daewoong Kwon* and Jong-Ho Lee*
Materials Horizons, Vol. 9, No. 6 (September 2022)

[18]‍ ‍Fully Integrated FET-type Gas Sensor with optimized Signal-to-Noise Ratio for H2S gas detection

Wonjun Shin, Yujeong Jeong, Seongbin Hong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 367 (September 2022)

[17]‍ ‍Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

Wonjun Shin, Ryun-Han Koo, Seongbin Hong, Dongseok Kwon, Joon Hwang, Byung-Gook Park and Jong-Ho Lee* 
IEEE Electron Devices Letters, Vol. 43, No. 7 (July 2022)

[16]Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy

Wonjun Shin, Jong-Ho Bae, Jaehyeon Kim, Ryun-Han Koo, Jae-Joon Kim, Daewoong Kwon* and Jong-Ho Lee*
Applied Physics Letters, Vol. 121, No. 6 (July 2022)

[15]‍ ‍Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: from Conduction Mechanism and Scaling Perspectives

Wonjun Shin, Jong-Ho Bae, Dongseok Kwon, Ryun-Han Koo, Byung-Gook Park, Daewoong Kwon* and Jong-Ho Lee* 
IEEE Electron. Devices Letters, Vol. 43, No. 6 (June 2022)

[14] ‍ ‍Effects of Postdeposition Annealing Ambience on NO2 Gas Sensing Performance in Si-based FET-type Gas Sensor

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Byung-Gook Park and Jong-Ho Lee*
IEEE Transactions on Electron Devices, Vol. 69, No. 5 (May 2022)

[13] ‍ ‍Optimization of Channel Structure and Bias Condition for Signal-to-Noise Ratio Improvement in Si-based FET-type Gas sensor with Horizontal Floating-Gate

Wonjun Shin, Gyuweon Jung, Seongbin Hong, Yujeong Jeong, Jinwoo Park, Donghee Kim, Byung-Gook Park, Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 357 (April 2022)

[12]‍ ‍Effects of Channel Length Scaling on the Signal-to-Noise Ratio in FET-type Gas Sensor with Horizontal Floating-Gate

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park and Jong-Ho Lee*
IEEE Electron Devices Letters, Vol. 43, No. 3 (March 2022)

[11]‍ ‍Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy

Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Jiyong Yim, Dongseok Kwon, Yeonwoo Kim, Junsu Yu, Joon Hwang, Byung-Gook Park, Daewoong Kwon* and Jong-Ho Lee*
Nanoscale, Vol. 14, No. 6 (February 2022)

[10]Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET

Wonjun Shin, Jong-Ho Bae, Sihyun Kim, Kitae Lee, Dongseok Kwon, Byung-Gook Park, Daewoong Kwon* and Jong-Ho Lee* 
IEEE Electron Device Letters, Vol. 43, No. 1 (January 2022)

2021

[9]‍ ‍Effects of IGZO film thickness on H2S gas sensing performance: response, excessive recovery, low-frequency noise, and signal-to-noise-ratio

Wonjun Shin, Daehee Kwon, Minjeong Rhy, Jowon Kwon, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 344 (October 2021)

[8]‍ Optimization of post-deposition annealing temperature for improved signal-to-noise-ratio in In2O3 gas sensor

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Byung-Gook Park and Jong-Ho Lee*
Semiconductor Science and Technology, Vol. 36, No. 7 (June 2021)

[7]‍ ‍Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes

Wonjun Shin, Dongseok Kwon, Jong-Ho Bae, Suhwan Lim, Byung-Gook Park and Jong-Ho Lee*
IEEE Electron Device Letters, Vol. 42, No. 6 (June 2021)

[6]‍ ‍Effect of Charge Storage Engineering on NO2 Gas Sensing Properties in WO3 FET-type Gas Sensor with Horizontal Floating-Gate

Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Chayoung Lee, Byung-Gook Park and Jong-Ho Lee*
Nanoscale, Vol. 13, No. 19 (May, 2021)

[5]‍ ‍Comparison of the characteristics of semiconductor gas sensors with different transducers fabricated on the same substrate

Gyunwoen Jung, Wonjun Shin, Seongbin Hong, Yujeong Jeong, Jinwoo Park, Donghee Kim, Jong-Ho Bae, Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 335 (May 2021)

[4] ‍ ‍Improved Signal-to-Noise-Ratio of FET-type Gas Sensors Using Body Bias Control and Embedded Micro-Heater

Wonjun Shin, Seongbin Hong, Gyunwon Jung, Yujeon Jeon, Jinwoo Park, Donghee Kim, Dongkyu Jang, Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 329 (February 2021)

[3]‍ ‍Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

Dongseok Kwon, Wonjun Shin, Jong-Ho Bae, Suhwan Lim, Byung-Gook Park and Jong-Ho Lee*
IEEE, Vol. 42, No. 3 (January 2021)

2020

[2]‍ ‍Proposition of Deposition and Bias Conditions for Optimal Signal-to-Noise-Ratio in Resistor- and FET-type Gas Sensors

Wonjun Shin, Gyuweon Jung, Seongbin Hong,Yujeong Jeong, Jinwoo Park, Donghee Kim, Dongkyu Jang, Dongseok Kwon, Jong-Ho Bae, Byung-Gook Park and Jong-Ho Lee*
Nanoscale, Vol. 12, No. 38 (September 2020)

[1] Low frequency noise characteristics of resistor- and Si MOSFET-type gas sensors fabricated on the same wafer with In2O3 sensing layer

Wonjun Shin, Gyuweon Jung ,Seongbin Hong ,Yujeong Jeong, Jinwoo Park, Dongkyu Jang ,Byung-Gook Park and Jong-Ho Lee*
Sensors and Actuators B: Chemical, Vol. 318 (September 2020)