2026

[4] Defect-mediated generation–recombination dynamics governing conductance response in floating-body transistors

Been Kwak°, Changhyeon Han°, Joonhyeok Choi°, Hwoibin You°, Youngchan Cho, Sangwan Kim, Wonjun Shin* and Daewoong Kwon*
Microsystems & Nanoengineering, Vol. 12, No. 285 (August 2026)



[3]‍ ‍Ferroelectric Gas Sensors for Edge Intelligence

Hosu Park°, Seojun Hwang°, Jisu Jang °,Youngchan Cho, Sangwan Kim, Daewoon Kwon*, Gyuweon Jung* and Wonjun Shin*
Sensors and Actuators B: Chemical, Vol. 466 (November 2026)

[2]‍ ‍A ferroelectric-ionic-trapping transistor for ultra-low power and secure neuromorphic computing

Changhyeon Han, Youngchan Cho, Dongbin Kim, Se-Hyun Hwang, Minsuk Song, Been Kwak, David Radermacher, Min Wook Kang, Sangwan Kim, Jangsaeng*, Wonjun Shin* and Daewoong Kwon*
Nature Communication, Accepted



[1]‍ ‍A novel observation of negative differential resistance in a standard CMOS transistor and its applications on compact frequency doubler

Been Kwak°, Youngchan Cho°, Changhyeon Han°, Jongwoo Lee°, Sangwan Kim, Yunho Shin, Joonhyeok Choi, Dongbin Kim, Seung June Lee, Seunghoo Lee, Wonjun Shin,*, Daewoong Kwon*
Microsystems & Nanoengineering, Vol. 12, No. 186 (May 2026)